voidless-hermetically-sealed ultrafast recovery glass re c tifier s microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 www. microsemi . com scottsdale division 1n5802 thru 1n5806 1n5802 ? 1n5806 copyright ? 2007 1-15-2007 rev a description appearance these ?ultrafast recovery? rectifier diodes are military qualified to mil-prf-19500/477 and are ideal for high-reliability applications where a failure cannot be tolerated. these industry-recognized 2.5 amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal ?category i? metallurgical bond. they are also available in surface-mount packages (see separate data sheet for 1n5802us thru 1n5806us). microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast in thru-hole and surface- mount packages. ?a? package important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? popular jedec registered 1n5802 to 1n5806 series ? voidless hermetically sealed glass package ? extremely robust construction ? triple-layer passivation ? internal ? category i? metallurgical bonds ? jan, jantx, jantxv, and jans available per mil-prf- 19500/477 ? surface mount equivalents also available in a square end-cap melf configuration with ?us? suffix (see separate data sheet for 1n5802us thru 1n5806us) ? ultrafast recovery 2.5 amp rectifier series 50 to 150v ? military and other high-reliability applications ? switching power supplies or other applications requiring extremely fast switching & low forward loss ? high forward surge current capability ? low thermal resistance ? controlled avalanche with peak reverse power capability ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? junction temperature: -65 o c to +175 o c ? storage temperature: -65 o c to +175 o c ? average rectified forward current (i o ): 2.5 a @ t l = 75oc ? thermal resistance: 36 oc/w junction to lead (l=.375 in) ? thermal impedance: 4.5 o c/w @ 10 ms heating time ? forward surge current: 35 amps @ 8.3 ms half-sine ? capacitance: 25 pf @ v r = 10 volts, f = 1 mhz ? solder temperature: 260oc for 10 s (maximum) ? case: hermetically sealed voidless hard glass with tungsten slugs (package dimensions on last page) ? terminations: axial-leads are tin/lead (sn/pb) over copper. note: previous jans inventory had solid silver axial-leads and no finish. ? marking: body painted and part number, etc. ? polarity: cathode indicated by band ? tape & reel option: standard per eia-296 ? weight: 340 mg electrical characteristics type working peak reverse voltage v rwm breakdown voltage (min.) @ 100 a v br average rectified current i o1 @ t l =+75oc (note 1) average rectified current i o2 @ t a =+55oc (note 2) maximum forward voltage @ 1 a (8.3 ms pulse) v f reverse current (max) @ v rwm i r surge current (max) i fsm (note 3) reverse recovery time (max) (note 4) t rr volts volts amps amps volts a amps ns 25 o c 100 o c 25 o c 100 o c 1n5802 1n5803 1N5804 1n5805 1n5806 50 75 100 125 150 55 80 110 135 160 2.5 2.5 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 0.875 0.875 0.875 0.800 0.800 0.800 1 1 1 1 1 50 50 50 50 50 35 35 35 35 35 25 25 25 25 25 note 1: i o1 is rated at 2.5 a @ t l = 75oc at 3/8 inch lead length. derate at 25 ma/oc for t l above 75oc. note 2: i o2 is rated at 1.0 a @ t a = 55oc for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where t j(max) does not exceed 175oc. derate at 8.33 ma/oc for t a above 55oc. note 3: t a = 25 o c @ i o = 1.0 a and v rwm for ten 8.3 ms surges at 1 minute intervals note 4: i f = 0.5 a, i rm = 0.5 a, i r(rec) = .05 a
voidless-hermetically-sealed ultrafast recovery glass rec tifier s www. microsemi . com scottsdale division 1n5802 thru 1n5806 1n5802 ? 1n5806 symbols & definitions symbol definition v br minimum breakdown voltage: the minimum volt age the device will exhibit at a specified current v rwm working peak reverse voltage: the maximum peak volt age that can be applied over the operating temperature range i o average rectified output current: ou tput current averaged over a full cy cle with a 50 hz or 60 hz sine-wave input and a 180 degree conduction angle v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current i r maximum leakage current: the maximum leakage current t hat will flow at the specif ied voltage and temperature c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage t rr reverse recovery time: the time interval between t he instant the current passes through zero when changing from the forward direction to the reverse direction an d a specified recovery decay point after a peak reverse current occurs. graphs figure 1 output current vs. lead temp. package dimensions inches / [mm] note: lead tolerance = +0.002/-0.003 inches microsemi scottsdale division page 2 copyright ? 2007 1-15-2007 rev a 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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